MG200Q2YS60A 2002-09-09 1 toshiba igbt module silicon n channel igbt MG200Q2YS60A (1200v/200a 2in1) high power switching applications motor control applications integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature) the electrodes are isolated from case. low thermal resistance v ce (sat) = 2.4 v (typ.) equivalent circuit signal terminal 1. g (l) 2. f o (l) 3. e (l) 4. v d 5. g (h) 6. f o (h) 7. e (h) 8. open 5 6 7 1 2 3 e1/c2 1 e2 f o f o ot 4
MG200Q2YS60A 2002-09-09 2 package dimensions: 2-123c1b 1. g (l) 2. f o (l) 3. e (l) 4. v d 5. g (h) 6. f o (h) 7. e (h) 8. open signal terminal layout 1. g (l) 2. f o (l) 3. e (l) 4. v d 5. g (h) 6. f o (h) 7. e (h) 8. open weight: 375 g 2.54 8 6 7 5 2.54 25.4 0.6 2.54 4 2 3 1
MG200Q2YS60A 2002-09-09 3 maximum ratings (ta 25c) stage characteristics symbol rating unit collector-emitter voltage v ces 1200 v gate-emitter voltage v ges 20 v dc i c 200 collector current 1 ms i cp 400 a dc i f 200 forward current 1 ms i fm 400 a inverter collector power dissipation (tc 25c) p c 2000 w control voltage (ot) v d 20 v fault input voltage vf o 20 v control fault input current if o 20 ma junction temperature t j 150 c storage temperature range t stg 40~125 c operation temperature range t ope 20~100 c isolation voltage v isol 2500 (ac 1 min) v module screw torque 3 (m5) n ? m electrical characteristics (t j 25c) 1. inverter stage characteristics symbol test condition min typ. max unit v ge 20 v, v ce 0 3/ 4ma gate leakage current i ges v ge 10 v, v ce 0 100 na collector cut-off current i ces v ce 1200 v, v ge 0 1.0 ma gate-emitter cut-off voltage v ge (off) v ce 5 v, i c 200 ma 6.0 7.0 8.0 v tj 25c 2.4 2.8 collector-emitter saturation voltage v ce (sat) v ge 15 v, i c 200 a tj 125c 3.2 v input capacitance c ies v ce 10 v, v ge 0, f 1 mhz 15000 pf turn-on delay time t d (on) 0.10 1.00 turn-off time t off 2.00 switching time fall time t f 0.50 reverse recovery time t rr v cc 600 v, i c 200 a v ge 15 v, r g 10 (note 1) 0.50 s forward voltage v f i f 200 a 2.4 2.8 v note 1: switching time test circuit & timing chart 2. control (tc 25c) characteristics symbol test condition min typ. max unit fault output current oc v ge 15 v 240 a over temperature ot 100 125 c fault output delay time t d (fo) v cc 600 v, v ge 15 v 8 s
MG200Q2YS60A 2002-09-09 4 3. module (tc 25c) characteristics symbol test condition min typ. max unit inverter igbt stage 0.062 junction to case thermal resistance r th (j-c) inverter frd stage 0.136 c/w case to fin thermal resistance r th (c-f) with silicon compound 0.013 c/w switching time test circuit timing chart i c r g r g l i f v ge v cc t d (on) t d (off) t r r 90% 90% 10% 10% t f i c v ge 10% i r r 90% i rr 20% i rr
MG200Q2YS60A 2002-09-09 5 remark short circuit capability is 6 s after fault output signal. please keep following condition to use fault output signal. v cc 750 v 14.8 v v ge 17.0 v r g 10 t j 125c to use this product, v ge must be provided higher than 14.8 v. in case v ge is less than 14.8 v, fault signal f o may not be output even under error conditions.
MG200Q2YS60A 2002-09-09 6 collector-emitter voltage v ce (v) collector-emitter voltage v ce (v) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) gate-emitter voltage v ge (v) v ce ? v ge collector-emitter voltage v ce (v) gate-emitter voltage v ge (v) v ce ? v ge gate-emitter voltage v ge (v) v ce ? v ge gate-emitter voltage v ge (v) i c ? v ge collector current i c (a) 0 0 1 5 100 200 300 400 2 3 4 common emitter t j 25c v ge 20 v 15 v 12 v 10 v 9 v 8 v 0 0 1 5 100 200 300 400 2 3 4 common emitter t j 125c v ge 20 v 15 v 12 v 10 v 9 v 8 v 0 0 5 10 15 20 2 4 6 8 10 12 i c 400 a common emitter t j 25c 200 a 100 a 0 0 5 10 15 20 2 4 6 8 10 12 i c 400 a common emitter t j 125c 200 a 100 a 0 0 5 10 15 20 2 4 6 8 10 12 i c 400 a common emitter t j 40c 200 a 100 a 0 0 2 4 6 8 10 12 100 200 300 400 common emitter v ce 5 v 25c t j 125c 40c
MG200Q2YS60A 2002-09-09 7 sw time ( ns ) sw loss e on , e of f (mj) forward voltage v f (v) i f ? v f forward current i f (a) gate-emitter voltage v ge (v) charge q g (nc) v ce , v ge ? q g collector-emitter voltage v ce (v) gate resistance r g ( ) sw time ? r g sw time ( ns ) gate resistance r g ( ) e on , e off ? r g collector current i c (a) sw time ? i c collector current i c (a) e on , e off ? i c sw loss e on , e of f (mj) 0 0 1 5 100 200 300 400 2 3 4 common cathode v ge 0 v t j 25c 40c 125c 0 0 500 1000 1500 2000 200 400 600 800 1000 0 4 8 12 16 20 v ce 0 v common emitter r l 3 t j 25c 200 v 600 v 400 v 10 5 0 10 15 20 25 1000 100 10000 v cc 600 v i c 200 a v ge 15 v t of f t f t r t d (on) t on t d (off) 1 0 10 100 5 10 15 20 25 e of f e on common emitter v cc 600 v i c 200 a t j 25c v ge 15 v t j 125c 10 0 50 100 150 200 100 1000 10000 t of f t on t d ( on ) t r t f t d ( off ) common emitter v cc 600 v r g 10 t j 25c v ge 15 v t j 125c 1 0 50 100 150 200 10 100 e of f e on common emitter v cc 600 v r g 10 t j 25c v ge 15 v t j 125c
MG200Q2YS60A 2002-09-09 8 collector current i c (a) collector current i c (a) forward current i f (a) i rr , t rr ? i f reverse recovery time t rr (ns) reverse recovery current i rr (a) forward current i f (a) e dsw ? i f reverse recovery loss e dsw (mj) collector-emitter voltage v ce (v) c ? v ce ca p acitance c (p f ) collector-emitter voltage v ce (v) safe-operating area collector-emitter voltage v ce (v) reverse bias soa pulse width t w (s) r th ? t w r th (j -c ) (c/w) 10 0 50 100 150 200 100 1000 t r r common emitter v cc 600 v r g 10 t j 25c v ge 15 v t j 125c i r r 0.1 0 50 100 150 200 1 10 100 common cathode v cc 600 v r g 10 t j 25c v ge 15 v t j 125c 100 0.01 0.1 1 10 100 1000 10000 100000 c ies c oes c res common emitter v ge 0 v f 1 mhz t j 25c 1 0 10 100 1000 400 800 1200 t j 125c r g 10 v ge 15 v 1 1 10 100 1000 10000 10 100 1000 i c max (pulsed) * * : single nonrepetitive pulse tc 25c curves must be derated linearly with increase in temperature. i c max (continuous) 1 ms 100 s 50 s 0.001 0.001 0.01 0.1 1 10 0.01 0.1 1 t c 25c diode stage transistor stage
MG200Q2YS60A 2002-09-09 9 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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